?2003 fairchild semiconductor corporation FGA15N120AN rev. a igbt FGA15N120AN FGA15N120AN general description employing npt technology, fairchild?s an series of igbts provides low conduction and switching losses. the an series offers solutions for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). features high speed switching low saturation voltage : v ce(sat) = 2.4 v @ i c = 15a high input impedance absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description FGA15N120AN units v ces collector-emitter voltage 1200 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c24 a collector current @ t c = 100 c15 a i cm (1) pulsed collector current 45 a p d maximum power dissipation @ t c = 25 c 200 w maximum power dissipation @ t c = 100 c80 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.63 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications induction heating, ups, ac & dc motor controls and general purpose inverters. g c e to-3p g c e g c e
FGA15N120AN rev. a FGA15N120AN ?2003 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 3ma 1200 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 3ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 3 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 15ma, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 15a , v ge = 15v -- 2.4 3.2 v i c = 15a , v ge = 15v, t c = 125 c -- 2.9 -- v i c = 24a , v ge = 15v -- 3.0 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1150 -- pf c oes output capacitance -- 120 -- pf c res reverse transfer capacitance -- 56 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 20 ? , v ge = 15v, inductive load, t c = 25 c -- 90 -- ns t r rise time -- 70 -- ns t d(off) turn-off delay time -- 310 -- ns t f fall time -- 60 120 ns e on turn-on switching loss -- 3.27 4.9 mj e off turn-off switching loss -- 0.6 0.9 mj e ts total switching loss -- 3.68 5.8 mj t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 20 ? , v ge = 15v, inductive load, t c = 125 c -- 80 -- ns t r rise time -- 60 -- ns t d(off) turn-off delay time -- 310 -- ns t f fall time -- 50 -- ns e on turn-on switching loss -- 3.41 -- mj e off turn-off switching loss -- 0.84 -- mj e ts total switching loss -- 4.25 -- mj q g total gate charge v ce = 600 v, i c = 15a, v ge = 15v -- 120 180 nc q ge gate-emitter charge -- 9 14 nc q gc gate-collector charge -- 63 95 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh
FGA15N120AN rev. a FGA15N120AN ?2003 fairchild semiconductor corporation 0246 0 20 40 60 80 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 20 40 60 80 100 120 20v 17v 15v 12v v ge = 10v t c = 25 collector current, i c [a] collector-emitter voltage, v ce [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 25 50 75 100 125 2.0 2.5 3.0 3.5 4.0 common emitter v ge = 15v 24a i c = 15a collector-emitter voltage, v ce [v] case temperature, t c [ ] 0.1 1 10 100 1000 0 10 20 30 vcc = 600v load current : peak of square wave duty cycle : 50% tc = 100 powe dissipation = 40w load current [a] frequency [khz] 0 4 8 12 16 20 0 4 8 12 16 20 24a 15a common emitter t c = 25 i c = 7.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 4 8 121620 0 4 8 12 16 20 24a 15a common emitter t c = 125 i c = 7.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
FGA15N120AN rev. a FGA15N120AN ?2003 fairchild semiconductor corporation 0 10203040506070 10 100 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 td(on) tr switching time [ns] gate resistance, r g [ ? ] 110 0 500 1000 1500 2000 2500 ciss coss common emitter v ge = 0v, f = 1mhz t c = 25 crss capacitance [pf] collector-emitter voltage, v ce [v] fig 7. capacitance characteristics fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 0 10203040506070 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 td(off) tf switching time [ns] gate resistance, r g [ ? ] 0 10203040506070 1 10 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = 125 eon eoff switching loss [mj] gate resistance, r g [ ? ] 5 1015202530 100 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 tr td(on) switching time [ns] collector current, i c [a] 5 1015202530 100 1000 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 td(off) tf switching time [ns] collector current, i c [a] fig 8. turn-on characteristics vs. gate resistance
FGA15N120AN rev. a FGA15N120AN ?2003 fairchild semiconductor corporation 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 0 20406080100120 0 2 4 6 8 10 12 14 16 600v 400v common emitter r l = 40 ? t c = 25 vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 5 1015202530 0.1 1 10 common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 eon eoff switching loss [mj] collector current, i c [a] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa fig 17. transient thermal impedance of igbt fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 collector current, i c [a] collector-emitter voltage, v ce [v]
?2003 fairchild semiconductor corporation FGA15N120AN rev. a FGA15N120AN package dimension to-3p (fs pkg code ) dimensions in millimeters 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?.05 0.60 +0.15 ?.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ]
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